PART |
Description |
Maker |
5962F0151601QXA 5962F0151601QXC 5962F0151601QXX 59 |
Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 3E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 5E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish solder. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish gold. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class Q. Lead finish optional. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish solder. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E6 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish gold. Total dose 1E5 rads(Si). Radiation-hardenet 8K x 8 PROM: SMD. 55ns access time, CMOS compatible inputs and CMOS compapible outputs. Class V. Lead finish optional. Total dose 1E5 rads(Si).
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Aeroflex Circuit Technology
|
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
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Alliance Semiconductor
|
M41T56C64MY6E |
512 bit (64 bit x8) Serial Access TIMEKEEPER SRAM 64 Kbit (8192 bit x8) EEPROM
|
ST Microelectronics
|
IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V TSI-TDM Switches 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
|
IDT[Integrated Device Technology]
|
M41T81 |
512 BIT (64 BIT SERIAL ACCESS RTC SRAM WITH ALARMS
|
ST Microelectronics
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
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AMIC Technology
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AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
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Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
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NEC
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MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
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OKI SEMICONDUCTOR CO., LTD.
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IRS21271SPBF IRS21281SPBF IRS2127SPBF |
Asynchronous SRAM; Organization (word): 256K; Organization (bit): x 16; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: TSOPII (44); Status: Remarks: Asynchronous SRAM; Organization (word): 1M; Organization (bit): x 4; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 3.0 to 3.6; Operating temperature (°C): 0 to 70; Package: SOJ (32); Status: Remarks:
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International Rectifier
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AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
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Alliance Semiconductor Corporation
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