PART |
Description |
Maker |
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET From old datasheet system
|
NXP Semiconductors Philips Semiconductors
|
2SC5212 |
Small Signal Transistor Low collector saturation voltage VCE(sat)=0.2V typ. High collector current ICM=1A.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET From old datasheet system Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
PC895 PC875 PC865 |
From old datasheet system High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
PMF290XN |
N-channel uTrenchmos (tm) extremely low level FET N-channel mTrenchMOS extremely low level FET N-channel mTrenchMOS extremely low level FET
|
http:// PHILIPS[Philips Semiconductors]
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
|
Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
2SD2459 |
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
ASM3P2872A ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
Alliance Semiconductor ALSC
|
PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|