| PART |
Description |
Maker |
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G27LS-75 BLF6G27-75 |
Product description75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
WiMAX power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. BLF6G27-75<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
| BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF25M612 BLF25M612G |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G21LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
|
