| PART |
Description |
Maker |
| HYG40P120H1S |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG30P120H1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG15P120A1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| HYG15P120B1K1 |
low switching losses
|
HY ELECTRONIC CORP.
|
| STF25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
Low switching losses
|
International Rectifier
|
| IRFR3410 |
Low Gate-to-Drain Charge to Reduce Switching Losses
|
Kersemi Electronic Co., Ltd.
|
| IKQ75N120CH3 |
Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode
|
Infineon Technologies A...
|
| STP25N60M2-EP |
Very low turn-off switching losses
|
STMicroelectronics
|
| SPP11N65C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPP16N50C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
| SPI07N60C3 SPA07N60C3 SPP07N60C3 |
for lowest Conduction Losses & fastest Switching
|
Infineon
|
