PART |
Description |
Maker |
FQA11N90C |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET 900V N-Channel Advanced QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A 900V Single N-Channel HEXFET Power MOSFET in a TO-262 package 900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series 900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series 900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQAF11N90C |
900V N-Channel Advance Q-FET C-series 900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
IRFPF50 IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
|
International Rectifier
|
IRFBF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) Power MOSFET(Vdss=900V/ Rds(on)=3.7ohm/ Id=3.6A)
|
International Rectifier
|
FQP5N90 |
900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|