| PART |
Description |
Maker |
| HMC999 |
GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz
|
Hittite Microwave Corporation
|
| CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15 |
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| XU1009-BD XU1009-BD-EV1 XU1009-BD-000V |
18.0-36.0 GHz GaAs MMIC Transmitter SPECIALTY TELECOM CIRCUIT, UUC12
18.0-36.0 GHz GaAs MMIC Transmitter 18.0-36.0 GHz的砷化镓单片发射
|
Mimix Broadband, Inc.
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| TGA2611 TGA2611-15 |
2 to 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2612 TGA2612-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| T1G6001528-Q3 T1G6001528-Q3-15 T1G6001528-Q3-EVB1 |
DC ?6 GHz 18 W GaN RF Power Transistor
DC 6 GHz 18 W GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
