| PART |
Description |
Maker |
| CMPA1C1D060D |
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025F |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2735075D |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA0060025D |
25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| GM20022005D |
GaN MMIC
|
RFHIC
|
| TGA2612 TGA2612-15 |
6 to 12 GHz GaN LNA
|
TriQuint Semiconductor
|
| CG2H80030D |
30 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率，高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| RMPA39100 |
37 - 40 GHz 1 Watt Power Amplifier MMIC
37-40 GHz 1 Watt Power Amplifier MMIC
DIODE SWITCHING DUAL-DUAL SERIES 240V 225mA-Io 350mW 50ns-trr SOT-26 3K/REEL
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
|
