PART |
Description |
Maker |
MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
MGP11N60ED-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
AP20G45EJ AP20G45EH |
N-CHANNEL INSULATED GATE
|
A-POWER[Advanced Power Electronics Corp.]
|
AP28G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
|
MSAGX75L60A |
LJT 8C 8#20 PIN WALL RECP 75 A, 600 V, N-CHANNEL IGBT N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp. IRF[International Rectifier]
|
MSAGX60F60A |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Microsemi Corporation
|
AP50GT60SW-HF |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|
AP25G45GEM |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
|
Advanced Power Electronics Corp.
|