| PART |
Description |
Maker |
| FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
| FQP3N50C |
N-Channel QFETMOSFET
|
Fairchild Semiconductor
|
| FQA11N90F109 |
N-Channel QFETMOSFET 900V, 11.4A, 960m
|
Fairchild Semiconductor
|
| FQD16N25C |
N-Channel QFETMOSFET 250V, 16A, 270m
|
Fairchild Semiconductor
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STGB3NB60KD STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH??IGBT
(STGP3NB60K / STGB3NB60K) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESHIGBT N沟道3A 600V IGBT的TO-220/DPAK/D2PAK PowerMESH
(STGD3NB60K / STGP3NB60K / STGP3NB60KD / STGB3NB60KD) N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
|
| HGTG30N60C3D FN4041 |
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes(63A, 600V, UFS系列 N沟道绝缘栅双极型晶体 63 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
