| PART |
Description |
Maker |
| NE85618 NE85619 |
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-343R
TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-23VAR
From old datasheet system
|
NEC Electron Devices
|
| MCH4015 |
RF Transistor, 12V, 100mA, fT=10GHz, NPN Single MCPH4
|
ON Semiconductor
|
| NTE1903 |
Integrated Circuit Negative 3 Terminal Voltage Regulator, -12V, 100mA 集成电路端稳压器 12V的，100mA
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BP5122 |
DC/DC converter (-12V/100mA output)
|
ROHM[Rohm]
|
| BP5034D12 |
AC/DC converter AC100V input/ 12V/100mA output
AC/DC converter AC100V input, 12V/100mA output
|
Rohm CO.,LTD.
|
| BC556A/E7 BC556A/E6 BC556C/E6 BC556C/E7 BC557C/E7 |
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一（c）|2
|
Infineon Technologies AG
NXP Semiconductors N.V.
|
| DTA124XCA DTA124XCAT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| BC857AR BC860CR BC858BR BC857BR BC856BR BC857CR |
POWER JACK DC 2.5MM CHASSIS MOUNT SHIELDED
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一（c）|36
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | TO-236 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一c）|36
POWER JACK DC 2.5MM CHASSIS MOUNT SHIELDED 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 100mA的一（c）|36
|
NXP Semiconductors N.V.
Unisonic Technologies Co., Ltd.
Electronic Theatre Controls, Inc.
|
