| PART |
Description |
Maker |
| BUK9618-55 BUK9618-56 BUK9618-55118 |
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP SEMICONDUCTORS
|
| BUK9535-55 |
TrenchMOS锛?M锛?ransistor Logic level FET(TrenchMOS锛?M锛??浣???昏??靛钩FET)
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM TMOS是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
|
ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| PHP21N06LT PHD21N06LT PHP21N06 PHB21N06LT PHB_PHD_ |
N-channel TrenchMOS(tm) transistor Logic level FET
From old datasheet system
N-channel TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
