| PART |
Description |
Maker |
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8602 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
NPN EPITAXIAL TYPE (STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA143006 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC307205 2SC3072 2SC3072-05 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA135707 2SA1357 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4681 |
Transistor Silicon NPN Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
| 2SC4682 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
