PART |
Description |
Maker |
BGA622 |
Silicon Germanium Wide Band Low Noise Amplifier
|
INFINEON[Infineon Technologies AG]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
SKY77912-21 |
Tx-Rx Front-End Module for Quad-Band GSM / GPRS / EDGE w/ 10 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell California Eastern Labs
|
BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
BFU760F BFU760F-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
BFU710F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|