PART |
Description |
Maker |
93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM 2K 5.0V Automotive Temperature Microwire Serial EEPROM Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
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Microchip Technology Inc.
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MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路 IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V From old datasheet system POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC Microprocessor Supervisory Circuits
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Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products Inc MAXIM - Dallas Semiconductor
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2SA505 |
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
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Inchange Semiconductor ...
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MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
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Motorola, Inc. Motorola Inc Motorola Mobility Holdings, Inc.
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HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3 Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
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Agilent(Hewlett-Packard)
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DT430 |
Collector-Emitter Breakdown Voltage
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Inchange Semiconductor ...
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2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
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USHA India LTD
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
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2SB806 |
High collector to emitter voltage: VCEO?120V. Collector-base voltage VCBO -120 V
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TY Semiconductor Co., Ltd
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