| PART |
Description |
Maker |
| AWT921S11 |
Integrated High Power Amp 900 MHz
|
ANADIGICS, Inc.
|
| MRFIC0904 |
900 MHz GaAs TWO STAGE DRIVER AMP INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MRFIC0914 |
900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT
|
MOTOROLA[Motorola, Inc]
|
| MW4IC001NR4 |
800鈥?170 MHz, 900 mW, 28 V W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier
|
MOTOROLA
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| NTE1878 |
Integrated Circuit Module, Voltage Amp for 2 Power, 2 Channel, 40W to 50W AF Power Amp
|
NTE[NTE Electronics]
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| GPMP900 GPMP900-24 GPMP900-28 GPMP900-36 GPMP900-4 |
High Power Supplies 900 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| APT10090BLL APT10090SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 12A 0.900 Ohm
|
Advanced Power Technology Ltd.
|
| MRFIC2006 |
900 MHz 2 STAGE PA SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| MRFIC2101 |
900 MHz TX-MIXER/EXCITER SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
