| PART |
Description |
Maker |
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics
STMicroelectronics
|
| STGWT40H65FB STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGP10M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
|
STMicroelectronics
|
| STGW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| STGW40M120DF3 |
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
|
ST Microelectronics
|
| STGB10M65DF2 |
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
|
STMicroelectronics
|
| STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF |
Low thermal resistance
600 V, 30 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| APTGT200SK60TG |
Buck chopper Trench Field Stop IGBT Power Module 290 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200H120G |
Full - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
