PART |
Description |
Maker |
16299 16299-A |
Slim Power Relay, 1 Form A, 6A 250VAC, Silver Alloy Contact HTSNK, C X-FLOW, .4H LOW FLOW, THREADED HTSNK C X-FLOW .4H LOW FLOW THREADED
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VICOR[Vicor Corporation]
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EG1126 |
Integrated Flow Function, Off-LIne Flow Model PWM controller
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Jingjing Microelectroni...
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IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
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IDT[Integrated Device Technology]
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17574 17574-5 |
HTSNK. C X-FLOW .9H LOW FLOW. THRU HOLE HTSNK. C X-FLOW, .9H LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
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IDT71V633S11PF IDT71V633S11PFI IDT71V633S12PFI IDT |
From old datasheet system 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect 3.3V 64K x 32 Static SRAM with Flow-Through Outputs
|
IDT[Integrated Device Technology]
|
MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆,3.3V的输输出,流通式同步脉冲静态内存)
|
Micron Technology, Inc.
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AS7C33128FT32_36B AS7C33128FT36B-80TQIN AS7C33128F |
3.3V 128K x 32/36 Flow Through Synchronous SRAM 3.3 128K的x 32/36流通过同步SRAM 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 32 STANDARD SRAM, 6.5 ns, PQFP100 3.3V 128K x 32/36 Flow Through Synchronous SRAM 128K X 36 STANDARD SRAM, 6.5 ns, PQFP100 128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100 LM3876 Overture™ Audio Power Amplifier Series High-Performance 56W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 3000; Container: Reel LM3880/LM3880Q Power Sequencer; Package: SOT-23; No of Pins: 6; Qty per Container: 1000; Container: Reel Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc. ALSC[Alliance Semiconductor Corporation]
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VO85536A-X0130 VO85516A-B200A VO85533A-X0020 VO855 |
KOMPAKTVENTIL HIGH FLOW DRUCKLUFT FEDER KOMPAKTVENTIL HIGH FLOW MAGNET FEDER KOMPAKTVENTIL HIGH FLOW DRUCKLUFT DRUCKL KOMPAKTVENTIL高流量DRUCKLUFT DRUCKL KOMPAKTVENTIL HIGH FLOW MAGNET MAGNET KOMPAKTVENTIL高流量磁
|
HIROSE ELECTRIC Co., Ltd. Bourns, Inc.
|
GS8162Z18B-133 GS8162Z18B-133I GS8162Z18B-200 GS81 |
133MHz 8.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 150MHz 7.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 225MHz 6ns 1M x 18 18MB pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM 250MHz 5.5ns 512K x 36 18MB pipelined and flow through synchronous NBT SRAM
|
GSI Technology
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GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
H7422 H7422-01 H7422P-50 H7422-02 H7422-20 H7422-4 |
Jack Screw; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No OSC 5V SMT PLAS 14X9 CMOS Slidelock; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No Photosensor Modules
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Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|