| PART |
Description |
Maker |
| PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 2N20 |
Drain Current ID= 2A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1171 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1217 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1224 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1462 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK755 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
