| PART |
Description |
Maker |
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| 2SB736A |
Micro package. Complementary to 2SD780A. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
| R0605280L2 |
Si Reverse, low current, 5 - 65 MHz, 28.0dB typ. Gain @ 65MHz, 140mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| 2SC2223 |
Micro package. High gain bandwidth product fT=600MHz TYP Low output capacitance.
|
TY Semiconductor Co., Ltd
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| R2005350L |
Si Reverse, low current, 5 - 200MHz, 35.2dB typ. Gain @ 200MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R1005300L |
Si Reverse, low current, 5 - 100MHz, 30.8dB typ. Gain @ 100MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R1005250L |
Si Reverse, low current, 5 - 100MHz, 25.4dB typ. Gain @ 100MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| R2005280L |
Si Reverse, low current, 5 - 200MHz, 28.2dB typ. Gain @ 200MHz, 135mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| 2SC1653 |
High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) High voltage VCEO : 130V
|
TY Semiconductor Co., Ltd
|
| VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
