| PART |
Description |
Maker |
| BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基（双）二极
SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Comchip Technology
|
| MA2SE01 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Panasonic Semiconductor
|
| MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
| CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBK0530-HF12 CDBK0530-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBK0520L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=30V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFPJ-53 SFPA-53 SFPJ-73 SFPJ-63 SFPA-63 SFPA-73 SF |
Schottky Barrier Diodes (Surface Mount) 30V(30V肖特基势垒二极管（表贴型
Schottky Barrier Diodes (Surface Mount) 30V 3 A, SILICON, RECTIFIER DIODE
Schottky Barrier Diodes (Surface Mount) 30V 1 A, SILICON, SIGNAL DIODE
SWITCH, COMPACT, 10/100, 8PORT; 2 A, SILICON, RECTIFIER DIODE
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS40-04W BAS40-05W BAS40-06W BAS40W BAS40W_3 |
Schottky barrier double diodes
From old datasheet system
Schottky barrier (double) diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 1SS88 |
Silicon Schottky Barrier Diode for CATV Balanced Mixer
Schottky Barrier Diodes for Detection and Mixer
|
Hitachi Semiconductor
|
