PART |
Description |
Maker |
CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
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Continental Device India Limited
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ASI10654 TVV005 |
NPN Silicon RF Power Transistor(Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.0 A,Vcbo: 55 V,Vceo: 30 V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10728 VHB50-28F ASI1001 ASI10522 ASI10534 ASI10 |
NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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CD931Y CD2331Y |
0.900W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 120 - 240 hFE 0.900W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 120 - 240 hFE
|
Continental Device India Limited
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ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE.
|
Isahaya Electronics Corporation
|
CN651 |
0.900W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 70 - hFE
|
Continental Device India Limited
|
CSC1008Y |
0.800W Low Frequency NPN Plastic Leaded Transistor. 60V Vceo, 0.700A Ic, 40 - 80 hFE.
|
Continental Device India Limited
|
CMMT491 |
0.500W General Purpose NPN SMD Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Complementary CMMT591
|
Continental Device India Limited
|
BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160 General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250 General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250 General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
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Infineon Technologies A... Infineon Technologies AG
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