PART |
Description |
Maker |
AS7C31025 AS7C31025-12JC AS7C31025-12JI AS7C31025- |
Parallel-Load 8-Bit Shift Registers 16-SSOP -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
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ALLIANCE MEMORY INC ALSC[Alliance Semiconductor Corporation] ETC[ETC] Alliance Semiconductor, Corp.
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LY62L1024RL-35LL LY62L1024RL-35LLE LY62L1024RL-35L |
128K X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT LOW POWER CMOS SRAM
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Lyontek Inc.
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LY62W1024RL-35LL.T LY62W1024RL-35LLI.T LY62W1024LL |
128K X 8 BIT LOW POWER CMOS SRAM 128K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
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LP62S1024BM-55LLT LP62S1024BM-70LLT LP62S1024B-T L |
55ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM 128K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMICC[AMIC Technology]
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LP61L1024S-12 LP61L1024X-12 LP61L1024V-12 LP61L102 |
128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的8.3V的高速低虚拟通道连接CMOS SRAM 128K X 8 BIT 3.3V HIGH SPEED LOW VCC CMOS SRAM 128K的83.3V的高速低虚拟通道连接CMOS SRAM
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AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
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BS62LV1027DC70 BS62LV1027PC70 BS62LV1027TC70 BS62L |
Very Low Power CMOS SRAM 128K X 8 bit 非常低功耗CMOS SRAM 128K的8
|
BRILLIANCE SEMICONDUCTOR, Inc.
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BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
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BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
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BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48 Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48 Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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AS7C31024A-10JI AS7C31024A-10STC AS7C31024A-10STI |
4-Bit Synchronous Binary Counters 16-VQFN -40 to 85 4-Bit Synchronous Binary Counters 16-TSSOP -40 to 85 128 x 64 pixel format, LED or EL Backlight available 8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85 BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Pin Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, UL 5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32 5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32 Replaced by SN74LV164A : 8-Bit Parallel-Out Serial Shift Register 14-SOIC -40 to 85 128K X 8 STANDARD SRAM, 20 ns, PDSO32 RES, SMD, 4.22K OHM, 1%, 1/10W, RMF BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Overtravel Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, U
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
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G-LINK Technology
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