| PART |
Description |
Maker |
| UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
| FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family
1024-16384-bit nonvlatile static ram family
NVRAM (Ferroelectric Based) NVRAM中（基于铁电
|
Ramtron International Corp.
Ramtron International, Corp.
|
| CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器
High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| M38259EFDFP M38258E4-FP M38258E4-FS M38258E4-GP M3 |
3825 Series Microcontrollers: On-Chip Segment LCDDrivers with A-D Converter
RAM size: 1536 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896 bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048 bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
|
| MAC5114LE MAS5114LE MAL5114LE MAR5114LB |
Radiation hard 1024 x 4 bit static RAM
|
Dynex Semiconductor
|
| D2148H |
High Speed 1024 x 4-Bit Static RAM
|
Intel
|
| HS-A82B-FREQ HS-820 HS-A82C-FREQ HS-A820-FREQ HS-A |
ECL-100K ECL Supplement
5 V, /-100 ppm, ECL crystal clock oscillator
5 V, /-50 ppm, ECL crystal clock oscillator
5 V, /-25 ppm, ECL crystal clock oscillator
5 V, customer specific, ECL crystal clock oscillator
|
NEL Frequency Controls
|
| X9110TB15-2.7 |
100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 1024 POSITIONS, BGA15
|
INTERSIL CORP
|
| HM6148HLP-55 HM6148HLP-45 |
1024-word x 4-bit High Speed Static CMOS RAM 1024字4位静态高速CMOS存储
|
Hitachi,Ltd.
|
| IDT101494S8Y IDT101494S15C |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K-BIT) SRAM
|
Integrated Device Technology, Inc.
|
| IDT100494BS7C IDT101494BS8C IDT101494BS8Y IDT10049 |
HIGH-SPEED BiCMOS ECL STATIC RAM 64K (16K×4-BIT) SRAM
HIGH-SPEED BICMOS ECL STATIC RAM 64K (16K】4-BIT) SRAM
|
Integrated Device Technology
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
