PART |
Description |
Maker |
9272006U1000 9272006100 9272006U500 |
20 AWG stranded (7x28) .038 tinned copper conductors, polyethylene insulation
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29545 |
20 AWG stranded (7x28) tinned copper conductors, PVC insulation, twisted pairs, PVC jacket.
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APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 67A 0.038 Ohm
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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83180601000 8318060500 |
22 AWG stranded (7x30) tinned copper conductors
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89740002500 89740002100 |
18 AWG stranded (19x30) tinned copper conductors
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93180605000 |
18 AWG pairs stranded (19x30) tinned copper conductors,
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8441 |
Overall braid, 22 AWG stranded (7x30) TC conductors, PVC insulation
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82723 82723877U1000 82723877U2000 827238775000 827 |
22 AWG stranded (7x30) TC conductors, plenum, FEP insulation
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1344189 |
18 AWG stranded (19x30) TC conductors, plenum, FEP insulation
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9729060100 97290601000 |
24 AWG stranded (7x32) tinned copper conductors, Datalene insulation
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1682728 |
RG-58A/U type, 20 AWG stranded (19x33) .035 tinned copper conductor
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9841 98410601000 9841060500 |
24 AWG stranded (7x32) TC conductors, polyethylene insulation, twisted pairs, overall Beldfoil
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