| PART |
Description |
Maker |
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE.
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220AB 晶体管|晶体管|达林顿|进步党| 110伏特五（巴西）总裁| 8A条一（c）| TO - 220AB现有
|
Continental Device India Limited
Won-Top Electronics Co., Ltd.
|
| CSD794Y CSD794O CSD794AY |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB744O
10.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744AY
|
Continental Device India Limited
|
| CJF3055 |
30.000W Medium Power NPN Plastic Leaded Transistor. 90V Vceo, 10.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| CSB817OF |
90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| BC161-10 BC161-16 BC160 BC160-10 BC160-16 BC161 |
PNP medium power transistors 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
