| PART |
Description |
Maker |
| PSMN003-25W_3 PSMN003-25W PSMN003-25W127 |
N-channel logic level TrenchMOS(tm) transistor
From old datasheet system
100 A, 25 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PLASTIC, TO-247, 3 PIN
|
Philips
NXP Semiconductors N.V.
|
| BD8311NUV BD8311NUV-E2 |
3.5-11V 0.8A 1ch Boost converter
|
ROHM
|
| Z20-11B Z20-12B Z20-13B Z20-14B Z20-16B Z20-15B Z2 |
2W AXIAL LEAD ZENER DIODES, 11V ?330V
|
Frontier Electronics.
|
| STH18NB40FI |
N-Channel 400V-0.19Ω-18.4A- TO-247/ISOWATT218 PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.19Ω- 18.4A - TO-247/ISOWATT218 PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
STMicroelectronics N.V.
|
| STW29NK50ZD W29NK50ZD |
N-CHANNEL 500V - 0.11 OHM - 29A TO-247 FAST DIODE SUPERMESH MOSFET
N-CHANNEL 500 V - 0.11蟹 - 29A TO-247 Fast Diode SuperMESH??MOSFET
N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET
N-CHANNEL 500 V - 0.11?/a> - 29A TO-247 Fast Diode SuperMESH?/a> MOSFET
N-CHANNEL 500 V - 0.11 - 29A TO-247 Fast Diode SuperMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 5962-89841 PALCE22V10-15DMB PALCE22V10-10 PALCE22V |
3.3V / 5V ECL ÷2/4, ÷4/5/6 Clock Generation Chip; Package: SOIC-20 WB; No of Pins: 20; Container: Rail; Qty per Container: 38
Flash-erasable Reprogrammable CMOS PAL Device FLASH PLD, 15 ns, CDFP24
Flash-erasable Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, CDIP24
Flash-erasable Reprogrammable CMOS PAL Device FLASH PLD, 10 ns, CDFP24
3.3V / 5V ECL Quad D Flip Flop with Set, Reset, and Differential Clock; Package: 32 LEAD LQFP 7x7, 0.8P; No of Pins: 32; Container: Tape and Reel; Qty per Container: 2000
3.3V / 5V ECL ÷2/4, ÷4/5/6 Clock Generation Chip; Package: TSSOP 20 LEAD; No of Pins: 20; Container: Rail; Qty per Container: 75
3.3V / 5V ECL ÷2/4, ÷4/5/6 Clock Generation Chip; Package: SOIC-20 WB; No of Pins: 20; Container: Rail; Qty per Container: 38
|
Ecliptek, Corp.
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| APT75DQ120SG APT75DQ120B APT75DQ120S APT75DQ120BG |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 75; VR (V): 1200; trr (nsec): 32; VF (V): 2.8; Qrr (nC): 3340; 75 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT75DQ60B APT75DQ60BG APT75DQ60S APT75DQ60SG |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 75; VR (V): 600; trr (nsec): 29; VF (V): 2; Qrr (nC): 650; 75 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Advanced Power Technology
|
| IRFP443 IRFP442 IRFPG42 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.1A I(D) | TO-247AC
TO-247 HEXFET Power MOSFETs
|
International Rectifier
|
| STP25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW2 |
From old datasheet system
N-CHANNEL Power MOSFET
N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET N沟道600V.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
