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STH360N4F6-2 -    High avalanche ruggedness N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package

STH360N4F6-2_8463194.PDF Datasheet
 
Part No. STH360N4F6-2
Description    High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
File Size 341.02K  /  12 Page  

Maker

STMicroelectronics
ST Microelectronics

Homepage http://www.st.com/
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