PART |
Description |
Maker |
NTF3055-100T3LF NTF3055-100T1 NTF3055-100-D |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 3A条(丁)|的SOT - 223
|
ON Semiconductor
|
BUK9107-55ATE |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426 晶体| MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-426封装 TrenchPLUS logic level FET
|
NXP Semiconductors N.V. Philips
|
STN3PF06 7515 |
P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET II POWER MOSFET P-CHANNEL 60V 0.18 OHM 3A SOT-223 STRIPFET II POWER MOSFET From old datasheet system P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET⑩ II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
STN1NC60 |
N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh?II MOSFET N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMeshII MOSFET N-CHANNEL 600V - 12ohm - 0.3A - SOT-223 PowerMesh⑩II MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
BSP220/T3 BSP92-T |
225 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SOT-223, 4 PIN 0.18 A, 200 V, 20 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
NDT014 NDT014J23Z |
N-Channel Enhancement Mode Field Effect Transistor.7A0V.2ΩN沟道增强型场效应管(漏电.7A, 漏源电压60V,导通电.2Ω 2.7 A, 60 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation
|
NTF3055-100 NTF3055-100T3G |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET) Power MOSFET 3.0 Amps 60 Volts N−Channel
|
ON Semiconductor
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
NTK3142PT5G NTK3142PT1G NTK3142P |
Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723 Small Signal MOSFET ?0 V, ?80 mA, P?Channel with ESD Protection, SOT?23
|
Rectron Semiconductor
|
IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET 1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) 100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
STN2NF06L |
N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|