| PART |
Description |
Maker |
| BTA12-600CW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| KRH10A20 KRH10A15 KRH10A10 KRH10A045 KRH10A06 FRH1 |
ITO-220AB 10.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers Unit : inch (mm)
|
Thinki Semiconductor Co...
|
| BTA312Y-800C BTA312Y-600C |
12 A Three-quadrant triacs high commutation insulated
3Q Hi-Com Triac BTA312Y-600C<SOT78D (TO-220AB)|<<http://www.nxp.com/packages/SOT78D.html<1<,;
|
NXP Semiconductors N.V.
|
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| 2N6404-AD 2N6400-BV 2N6403-AF 2N6405-AJ |
16 A, 600 V, SCR, TO-220AB
16 A, 50 V, SCR, TO-220AB
16 A, 400 V, SCR, TO-220AB
16 A, 800 V, SCR, TO-220AB
|
MOTOROLA INC
|
| Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五（DRM）的| 8A条口（T）的有效值| TO - 220AB现有
TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五（DRM）的| 8A条口T）的有效值| TO - 220AB现有
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五（DRM）的| 4A条口（T）的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp.
Littelfuse, Inc.
|
| BUZ215-E3045 |
5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| BUZ40B-E3044 |
8.5 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
Infineon Technologies AG
|
| BUZ76A-E3045 |
2.7 A, 400 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| IRG4BC30S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 60 V, 0.023 ohm, N-CHANNE
81 A, 60 V, 0.012 ohm, N-CHANNE
27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
VISHAY INTERTECHNOLOGY INC
|
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