| PART |
Description |
Maker |
| LE25S80FDTWG |
8M-bit (1024K x 8) Serial Flash Memory
|
ON Semiconductor
|
| EN29LV160JB70S EN29LV160JB70SI EN29LV160JB70SIP EN |
Replaced by PTN78000W : 16兆位048K × 8 1024K x 16位）闪存引导扇区闪存，CMOS 3.0伏，
Replaced by PTN78000W : 8VOUT 1A WIDE INPUT POSITIVE STEP-DOWN ISR 3-SIP MODULE
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
|
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| 24LC1026 24FC1026 |
1024K I2C Serial EEPROM
1024K I2C?Serial EEPROM
|
Microchip Technology
|
| 24LC1025T 24FC1025T |
1024K I2C CMOS Serial EEPROM
1024K I2C?CMOS Serial EEPROM
|
Microchip Technology
|
| 24FC1025 |
1024K I2C CMOS Serial EEPROM
|
Microchip Technology
|
| EN29LV800CB-70TI EN29LV800CB-70TIP EN29LV800CB-70B |
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
|
Eon Silicon Solution Inc.
|
| 24FC1026 |
1024K I2C?CMOS Serial EEPROM 100 kHz and 400 kHz Clock Compatibility
|
Microchip Technology
|
| LY62102616 LY62102616E LY62102616I LY62102616LL LY |
1024K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY61L102416AGL-10 LY61L102416AGL-10I LY61L102416AG |
1024K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| EN29LV800JT-70T EN29LV800JT-90TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 70ns. Top sector.
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 3.0 volt only. Speed 90ns. Top sector.
|
Eon Silicon Solution
|
| N08L083WC2CT1-55IL N08L083WC2C N08L083WC2CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 8 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 8 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
