PART |
Description |
Maker |
T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G6003028-FL-15 T1G6003028-FS-EVB1 |
30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor 30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH27015F CGH27015F-TB CGH27015F-AMP |
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
|
Cree, Inc
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
TGA2611-SM-15 |
2 6 GHz GaN LNA
|
TriQuint Semiconductor
|
CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
TGA2958 |
13 to 18 GHz 2W GaN Driver Amplifier
|
TriQuint Semiconductor
|
CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
QPM1002 |
8.5 - 10.5 GHz GaN Transmit / Receive Module
|
Qorvo
|
|