PART |
Description |
Maker |
T2G405528-FS-EVB2 T2G4005528-FS |
55W, 28V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
PE2235-30 |
HIGH POWE R DIRECTIONAL COUPLER FREQUENCY RANGE: 4-12 GHz
|
Pasternack Enterprises, Inc.
|
DU2810S |
RF Power MOSFET Transistor 10W, 2-175MHz, 28V
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
UF2810P UF281OP |
RF MOSFET Power Transistor, 10W, 28V 100-500MHz
|
Tyco Electronics
|
D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管(功100W - 28V 900MHz时)(镀金多用的DMOS射频硅场效应管(功率100W - 28V 900MHz的) TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd. TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
TGA2611 TGA2611-15 |
2 to 6 GHz GaN LNA
|
TriQuint Semiconductor
|
CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
TGA2622-CP TGA2622-CP-15 |
9 to 10 GHz 35 W GaN Power Amplifier
|
TriQuint Semiconductor
|
CGHV59070F-TB |
70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT
|
Cree, Inc
|
|