| PART |
Description |
Maker |
| STK1040 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:10A; Holding Current:50mA
|
|
| STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based)
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
|
Atmel, Corp.
|
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| RJQ6022DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STK14C68-C25 STK14C68-5S30 STK14C68-5S25 STK14C68- |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
NVRAM (EEPROM Based)
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:30A; Gate Trigger Current Max, Igt:200uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15mA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:15uA RoHS Compliant: Yes
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):70A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| IT124G IT84C IT82B IT102G IT120F IT124F IT100F IT8 |
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|50V V(DRM)|12A I(T)RMS|TO-220
TRIAC|50V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|50V V(DRM)|8A I(T)RMS|TO-220 可控硅| 50V五（DRM）的| 8A条口T）的有效值|20
TRIAC|100V V(DRM)|12A I(T)RMS|TO-220 可控硅| 100V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|220
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|220
TRIAC|50V V(DRM)|8A I(T)RMS|TO-220 可控硅| 50V五（DRM）的| 8A条口（T）的有效值|20
|
STMicroelectronics N.V.
Electronic Theatre Controls, Inc.
Sullins Connector Solutions, Inc.
Sanyo Electric Co., Ltd.
KEC Holdings
Aavid Thermalloy, LLC
Cornell Dubilier Electronics, Inc.
|
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| BP10-005L BP10-01L BP10-08L BP10-10L BP10-02L BP10 |
10A HIGH CURRENT BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| JMK316BJ226ML-T501 LTM4600EV LTM4600IV LTM460006 L |
10A High Effi ciency DC/DC 渭Module
10A High Effi ciency DC/DC μModule
10A High Efficiency DC/DC µModule; Package: LGA; No of Pins: 104; Temperature Range: -40°C to 85°C
10A High Effi ciency DC/DC μModule
|
Linear Technology
LINEAR TECHNOLOGY CORP
|
| SF10A200HPR SF10A200HPR-1 |
200V, 10A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
| FFB20UP20DN10 FFB20U20DNF085 |
10A, 200V Ultrafast Dual Rectifiers
|
Fairchild Semiconductor
|
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