| PART |
Description |
Maker |
| IS61QDP2B41M36A2 IS61QDP2B41M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7B321825M K7B323625M K7B323625M-QC6575 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk
1Mx36 & 2Mx18 Synchronous SRAM
1Mx36 & 2Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7D323674C-HC33 K7D323674C-GC33 K7D323674C-GC40 K7 |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
| K7A321830C K7A323630C K7A321830C-PC20 K7A323630C-P |
1Mx36 and 2Mx18 Synchronous SRAM 1Mx36Mx18同步SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R3236 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7J323682C K7J321882C |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
| K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7N323645MK7N321845M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7D801871B K7D801871B-HC37 K7D801871B-HC35 K7D8018 |
256Kx36 & 512Kx18 SRAM
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7Q323682MK7Q321882M |
1Mx36-bit, 2Mx18-bit QDRSRAM Data Sheet
|
Samsung Electronic
|
| XC1700E XC1701LPC20C XC1701LPC20I XC1701LPD8C XC17 |
Configuration PROM.
XC1700E and XC1700L Series Configuration PROMs
IC,EPROM,128KX1,CMOS,DIP,8PIN,PLASTIC
From old datasheet system
Configuration PROMs 4M X 1 CONFIGURATION MEMORY, PQFP44
Configuration PROMs 256K X 1 CONFIGURATION MEMORY, PQCC20
|
Xilinx Inc
XILINX[Xilinx, Inc]
Xilinx, Inc.
|
