| PART |
Description |
Maker |
| STP150NF04 |
Standard level gate drive
|
STMicroelectronics
|
| IRLR2705TRL |
Logic-Level Gate Drive
|
International Rectifier
|
| IRLZ44NSLPBF |
Logic-Level Gate Drive
|
International Rectifier
|
| IRLRU3410 |
Logic Level Gate Drive / Fully Avalanche Rated
|
International Rectifier
|
| IRLR024NTRPBF IRLR024NPBF IRLR024NPBF-15 |
Advanced Process Technology
Logic-Level Gate Drive
|
International Rectifier
|
| FDG332PZ |
Very low level gate drive requirements allowing operation in 1.5V circuits
|
TY Semiconductor Co., L...
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHP73N06 PHP73N06T PHP73N06T127 PHB73N06T |
TrenchMOS(tm) standard level FET
TrenchMOS (tm) standard level FET
73 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Philips
NXP SEMICONDUCTORS
|
| BUK7608-55_2 BUK7608-55 BUK7608-55-15 |
TrenchMOS transistor Standard level FET
From old datasheet system
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
|
NXP Semiconductors N.V.
|
| AP9452AGG-HF |
Capable of 2.5V Gate Drive, Single Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2322GN-HF AP2322GN-HF14 |
Capable of 1.8V gate drive, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
