PART |
Description |
Maker |
CY62157ESL-45ZSXI CY62157ESL-13 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
CY62148ELL-45ZSXA CY62148ELL-45ZSXI CY62148ELL-55S |
4-Mbit (512 K ? 8) Static RAM 4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM MoBL® 32-Mbit (2M x 16) Static RAM MoBL® 16-Mbit (1M x 16) Static RAM "SHIELDING BAG 16 X 18"" Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”,“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
CY62148ELL-55SXA CY62148ELL-45ZSXA CY62148ELL-45ZS |
4-Mbit (512 K x 8) Static RAM Automatic power-down when deselected
|
Cypress Semiconductor
|
CY7C1049D-10VXI CY7C1049D11 |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位).8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位)1.8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
SST4117A SST4118A |
1-Mb (128K x 8) Static RAM 1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我(直)| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
AM41PDS3228DT10IS AM41PDS3228DB10IT AM41PDS3228DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
|
AM41PDS3224DT10IS AM41PDS3224DT100IS AM41PDS3224DT |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位)的CMOS电压1.8只。同时采取行动,页面模式闪存兆位12x 8-Bit/256x 16位),静态存储器(初步) Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
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