PART |
Description |
Maker |
AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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MITEQ, Inc. MITEQ INC
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STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包,中功 (STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power 1300 nm Laser in Receptacle Package,Medium Power 1300 nm Laser in Receptacle Package Medium Power From old datasheet system 1300 nm Laser, Medium Power
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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SBM82314X SBM82314 SBM82314Z SBM81314G SBM81314N S |
Medium Power BIDI Optical Standard Module 1550 nm Emitting, 1310 nm Receiving From old datasheet system Transceiver Medium Power BIDI Optical Standard Module 1550 nm Emitting/ 1310 nm Receiving Components and FTTx solutions - Tx 1550nm/Rx 1310nm, Medium Power
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INFINEON[Infineon Technologies AG]
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SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving Transceiver Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving 中功率比迪光学标准模1310纳米发光,纳米接1310
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INFINEON[Infineon Technologies AG]
|
2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) Medium Power Transistor (32V, 0.5A) Medium Power Transistor (32V 0.5A) Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
2SC3420 E000842 |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MPS-A05 MPS-A55 MPS-A56 MPS-A06 |
COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS COMPLEMENTRAY SILICON AF MEDIUM POWER TRANSISTORS
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MICRO-ELECTRONICS[Micro Electronics]
|
QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
SF16JZ51 SF16GZ51 |
MEDIUM POWER CONTROL APPLICATIONS THYRISTOR SILICON PLANAR TYPE MEDIUM POWER CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
ZDT6753 |
SM-8 COMPLEMENTARY MEDIUM POWER COMPLEMENTARY MEDIUM POWER TRANSISTORS
|
Diodes Incorporated Zetex Semiconductors
|
BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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