| PART |
Description |
Maker |
| PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
|
Pasternack Enterprises,...
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| AP836 |
35 Watts TO-220 High Power Resistors
|
List of Unclassifed Manufacturers
|
| AD084DMAA1-J25 FSP084-DMAA1 |
84 Watts Power Adapter High efficiency and reliability
|
Sparkle Power Inc.
|
| FSP120-AHAN1 AD120AHAN1-J25R |
120 Watts Power Adapter High efficiency and reliability
|
Sparkle Power Inc.
|
| PTH32003 |
25 Watts/ 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid
25 Watts, 1.9-2.0 GHz 50-Ohm High-Gain Power Hybrid
25 Watts, 1.9.0 GHz 50-Ohm High-Gain Power Hybrid
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| FSP250-50PLB |
220/250 Watts Flex ATX12V, 1U High Switching Power Supply
|
Sparkle Power Inc.
|
| JTDA50 |
RF Power Transistors: AVIONICS
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
|
| TPR400 |
400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
high power COMMON BASE bipolar transistor.
|
List of Unclassifed Manufacturers
ETC[ETC]
GHZTECH[GHz Technology]
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
