| PART |
Description |
Maker |
| STS8235 |
Super high dense cell des ign for low R DS (ON).
|
TY Semiconductor Co., Ltd
|
| SLE66CX320P |
Engine and 64-Bit DES accelerator(16位安全控制器(B>64-KB ROM,3K RAM, 32KB EEPROM))
|
SIEMENS AG
|
| IXA20IF1200HB |
Easy paralleling due to the positive temperature Easy paralleling due to the positive temperature
|
IXYS Corporation
|
| AOK30B135W1 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| RAD-ISM-2400-ANT-CIR-8-0 |
Particularly suitable for use in industrial halls with a very high reflection component due to metal
|
PHOENIX CONTACT
|
| MCP111 MCP112 MCP111-195 MCP112T-475E MCP111T-195I |
The MCP111/112 Series are CMOS voltage detectors are well suited for portable, consumer electrics applications due to the extremely ...
Micropower Voltage Detector
|
MICROCHIP[Microchip Technology]
|
| SML-LX0201USBC-TR |
THE SPECIFICATIONS MAY CHANGE AT ANY TIME WITHOUT NOTICE DUE TO NEW MATERIALS OR PRODUCT IMPROVEMENT
|
LUMEX INC.
|
| IPT1206-CEB IPT1206-SEB IPT1206-TEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPT12Q06-CEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPT1206-BEF IPT1206-TEF IPT1206-CEF IPT1206-SEF |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
