| PART |
Description |
Maker |
| PTB20031 |
40 Watts, 42070 MHz RF Power Transistor
40 Watts, 420-470 MHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20080 |
25 Watts, 1.6-1.7GHz RF Power Transistor
25 Watts, 1.6-1.7 GHz RF Power Transistor
25 Watts 1.6-1.7 GHz RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| PTF10021 |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| SA80 SA51 SA110 SA100 SA43 SA22 SA45A SA150A SA48A |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
TOOL LONGNOSE ANTI-SHOCK SHEAR
RES 21.5 OHM 1/16W .5% 0603 SMD
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| AVO50C-48S3V3-6L AVO50-48S2V5P-4 AVO50-48S05-4 AVO |
POWER 50 Watts
Low ripple and noise
POWER 50 Watts
|
Artesyn Technologies
|
| PTB20077 |
0.7 Watts, 1525660 MHz INMARSAT RF Power Transistor
0.7 Watts, 1525-1660 MHz INMARSAT RF Power Transistor
0.7 Watts 1525-1660 MHz INMARSAT RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20006 |
4 Watts, 86000 MHz Cellular Radio RF Power Transistor
4 Watts, 860-900 MHz Cellular Radio RF Power Transistor
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20008 |
10 Watts, 93560 MHz Cellular Radio RF Power Transistor
10 Watts, 935-960 MHz Cellular Radio RF Power Transistor
10 Watts 935-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
