| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| XC5215-6HQ240C XC5215-6HQ208C XC5200-4PC84C XC5206 |
TV 6C 6#12 SKT RECP
TV 6C 6#220 PIN RECP FPGA, 120 CLBS, 4000 GATES, 83 MHz, CPGA156
CTV 6C 6#22D PIN RECP 现场可编程门阵列
Field Programmable Gate Arrays 现场可编程门阵列
Field Programmable Gate Arrays FPGA, 64 CLBS, 2000 GATES, 10 MHz, PQFP64
ARTESYN PART 现场可编程门阵列
Field Programmable Gate Arrays FPGA, 120 CLBS, 4000 GATES, 83 MHz, PQFP100
Field Programmable Gate Arrays FPGA, 484 CLBS, 15000 GATES, 83 MHz, PQFP208
ECONOLINE: RZ - 1kVDC Isolation- SMD Package Styles- 5V, 12V and 15V Output- UL94V-0 Package Material- No Heatsink Required- No Extern. Components- Toroidal Magnetics- Efficiency to 62% FPGA, 324 CLBS, 10000 GATES, 83 MHz, PQFP208
Field Programmable Gate Arrays FPGA, 484 CLBS, 15000 GATES, 83 MHz, PQFP160
Field Programmable Gate Arrays FPGA, 324 CLBS, 10000 GATES, 83 MHz, CPGA223
Low-cost, register/latch rich, SRAM based
|
Xilinx, Inc.
XILINX INC
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| MSM514223B |
262,263-Word x 4-Bit Field Memory
262263-Word x 4-Bit Field Memory
From old datasheet system
|
OKI electronic components
OKI[OKI electronic componets]
|
| PSD401A1-C-90JI PSD401A1-C-90UI PSD401A2-C-90JI PS |
Low Cost Field Programmable Microcontroller Peripherals
Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD4XX/ZPSD4XX FAMILY FIELD-PROGRAMMABLE MICROCONTROLLER PERIPHERALS
|
ST Microelectronics
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| FGH15T120SMD |
1200V, 15A, Field Stop Trench IGBT
1200 V, 15 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| AH277AZ4-CG1 AH277AZ4-AE1 AH277AZ4-BG1 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-94, SIP-4,
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT
|
BCD Semiconductor Manufacturing, Ltd.
BCD SEMICONDUCTOR MANUFACTURING LTD
|
| EPF10K30EFC484-3DX EPF10K100BQC208-3DX EPF10K100BQ |
ASIC 专用集成电路
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
|
TE Connectivity, Ltd.
DOMINANT Opto Technologies Sdn. Bhd.
Altera, Corp.
Vectron International, Inc.
Cypress Semiconductor Corp.
PATLITE, Corp.
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation
Toshiba, Corp.
Toshiba Semiconductor
|
|
