| PART |
Description |
Maker |
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| W9725G6KB25A W9725G6KB-25 W9725G6KB-18 W9725G6KB-3 |
DLL aligns DQ and DQS transitions with clock, Data masks (DM) for write data, Write Data Mask
|
Winbond
|
| MC74HC354DW MC54_74HC354 ON1412 MC54HC354 MC74HC35 |
8-Input Data Selector/Multiplexer With Data and Address Latches and 3-State Outputs
8-INPUT DATA SELECTOR/MULTLPLEXER WLTH DATA AND ADDRESS LATCHER AND 3-STATE OUTPUTS
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| R2705E |
27.195MHz FSK Radio Data Receiver for Manchester Data Format
|
List of Unclassifed Manufacturers
|
| F-137G |
High Frequency Data Line Filter 3 Coils 6 Data Lines
|
Rhombus Industries Inc.
|
| AD1801JST |
1400 kbps DATA, MODEM-DATA/FAX/VOICE, PQFP128 TQFP-128
|
Analog Devices, Inc.
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| ST7FDALI ST7FDALIF2B6 ST7FDALIF2M6 ST7FLITE2 ST7FL |
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI (DATA BRIEFING)
|
ST Microelectronics
|
