| PART |
Description |
Maker |
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| APT1101RSFLL |
Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)
|
|
| APT13GP120K |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon）：3.6V的身份证（续）：一三安培|超快IGBT的家
|
Commonwealth Industrial, Corp.
|
| ICE3AR0680JZ |
Of f -Line SMPS Cur rent Mode Cont rol ler wi th integrated 800V
|
Infineon Technologies A...
|
| VS-T90RIA100 YA200KT20 T7RYA201KT20 |
SCR PHASE CONT 1000V 90A D-55
T..RIA Series Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A
|
Vishay Semiconductors
|
| 5-583294-2 |
.156 Centerline Connectors (AMP-LEAF); CONT AMP LEAF L/P 15 AU ( Tyco Electronics )
|
Tyco Electronics
|
