PART |
Description |
Maker |
1MBI200S-120 |
IGBT MODULE 1200V / 200A / 1 in one package
|
Fuji Electric
|
PDMB200B12C |
IGBT MODULE Dual 200A 1200V
|
NIEC[Nihon Inter Electronics Corporation]
|
PCHMB200B12 |
IGBT MODULE Chopper 200A 1200V
|
NIEC[Nihon Inter Electronics Corporation]
|
DMB200B12 |
IGBT MODULE Dual 200A 1200V
|
NIEC[Nihon Inter Electronics Corporation]
|
6MBP200VEA120-50 |
IGBT MODULE (V series) 1200V / 200A / IPM
|
Fuji Electric
|
IAP200B120 |
200A / 1200V Full-Bridge IGBT Inverter
|
APPLIED POWER SYSTEMS
|
7MBP200VEA120-50 |
IGBT MODULE (V series) 1200V / 200A / IPM
|
Fuji Electric
|
IRG7U100HF12B |
1200V 100A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package
|
International Rectifier
|
IRG5U150HF12B |
1200V 150A Ultra Fast IGBT Half-Bridge module packaged in POWIR 62 package
|
International Rectifier
|
SKW15N120 Q67040-S4281 |
IGBTs & DuoPacks - 15A 1200V TO247AC IGBT Diode FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE 在不扩散核武器条约快速IGBT技术与软,恢复快反平行Emcon二极
|
INFINEON[Infineon Technologies AG]
|
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技 IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|