PART |
Description |
Maker |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD50 Amperes/1200 Volts 50 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
APT25GT120BRDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 25; 54 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
STTH312B -STTH312B |
Ultrafast recovery - 1200 V diode 3 A, 1200 V, SILICON, RECTIFIER DIODE
|
STMICROELECTRONICS
|
MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264 IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED From old datasheet system
|
ONSEMI[ON Semiconductor]
|
MSM6927GS-2K MSM6927GS-K MSM6947GS-K MSM6927RS |
1200 bps Single Chip FSK MODEM(1200bps单片FSK调制解调 1200 bps Single Chip FSK MODEM(1200bps半双工FSK调制解调ITU-T V.23,双电源供 1200 bps Single Chip FSK MODEM 1200 bps的单片FSK调制解调
|
OKI SEMICONDUCTOR CO., LTD.
|
X37120B1N1 |
Single Phase Bridge; Package: SEE_FACTORY; IO/ Leg (A): 80; VR / Leg (V): 1200; IFSM / Leg (A): 1500; 1200 V, SILICON, BRIDGE RECTIFIER DIODE
|
Microsemi, Corp.
|
CM75DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 75 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors] Powerex, Inc.
|
APT2X31DQ120J APT2X30DQ120J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 1200; trr (nsec): 25; VF (V): 2.6; Qrr (nC): 1800; 30 A, 1200 V, SILICON, RECTIFIER DIODE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
NU80579ED009C |
Intel® EP80579 Integrated Processor with Intel® QuickAssist Technology, 80579ED009C, 1200 MHz 32-BIT, 1200 MHz, MICROPROCESSOR, PBGA1088
|
Intel, Corp.
|