| PART |
Description |
Maker |
| IRFY044CM |
60V 0.040Ω N-Channel HEXFET Power MOSFET(60V 0.040Ω N沟道 HEXFET 功率 MOS场效应管) 60V.040ΩN沟道HEXFET功率MOSFET60V.040Ω沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| LTC3834-1 LTC3891 LTC3863 LTC3835-1 LTC3859AL LTC3 |
60V Low IQ Inverting DC/DC Controller Wide Operating VIN Range: 3.5V to 60V
|
Linear Technology
|
| 2SA1290 |
60V/7A High-Speed Switching Applications 60V/7A高速开关应
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| 2SD880 2SD880O |
POWER TRANSISTORS(3A/60V/30W)
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|20VAR
Low Frequency Transistor (60V, 3A)
Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc.
Rohm CO.,LTD.
|
| FDB10AN06A0 FDP10AN06A0 |
CAP 0.1UF 50V 5% X7R SMD-1206 TR-7-PA SN100
N-Channel PowerTrench MOSFET 60V/ 75A/ 10.5m
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mз
N-Channel PowerTrench MOSFET 60V, 75A, 10.5mOhm
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| FAN1086D-2.85 FAN1086S-3.3 FAN1086S-2.5 FAN1086M-2 |
Neuron ICs; Max. Input Clock: 20 MHz; EEPROM: 2 KB; RAM: 2 KB; ROM: 16 KB; Package: 32 pin SOP; External Memory I/F: No
; Sensitivity dBµmV: 93 ~ 107; Package: SSOP16; Production Status: MP
FETs Nch 30VFETs Nch 30VPhase Lock Loop; Dual or Single: Single; Features: Integer - N; Power Supply V: 2.4 ~ 3.5; ImA: 4.8; Input FMHz: 700 ~ 1800; Operating Freq-MHz: 5 ~ 25; Sensitivity dBµmV: 92 ~ 107; Package: SSOP10; Production Status: MP
FETs Nch 30VFETs Nch 30VFETs Nch 30VMOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; R DS On (Ω): (max 0.018) (max 0.013) (max 0.012); I_S (A): (max 6)
FETs Nch 30VFETs Nch 30VFETs Nch 30VFETs Nch 30VTHREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS
积极的固定电压稳压器
FETs Nch 30V<VDSS=60V; ; Package: TO-3P(N); R DS On (O): (max 0.055) (max 0.03); I_S (A): (max 45)
FETs Nch 30V<VDSS=60V; Surface Mount Type: N; Package: TO-220NIS; R DS On (O): (max 0.025) (max 0.017); I_S (A): (max 45)
|
|
| 2SD2027S 2SB507C 2SB1346S 2SD2027R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | SOT-186
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Rohm Co., Ltd.
|
