| PART |
Description |
Maker |
| EN12-VS22AF20 EN12 EN12-VS10AF20 EN12-VS11AF20 EN1 |
12mm Rotary Encoder 2 Bits Gray Code Incremental/Contacting Type Metal Bushing/Plastic Shaft Push-on Switch Option RoHS Compliant
|
BITECH[Bi technologies]
|
| EN11-VSM3BQ20 EN11-HNB2AQ20 EN11-HNB2BF20 EN11-HNB |
11mm Rotary Encoder 2 Bits Gray Code Incremental/Contacting Type Metal Bushing/Shaft Push-on Switch Option RoHS Compliant
11mm Rotary Encoder 2 Bits Gray Code Incremental/Contacting Type Metal Bushing/Shaft Push-on Switch Option RoHS Compliant
|
Bi technologies
|
| IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
|
| EDS6416AHBH-75-E EDS6416CHBH-75-E |
64M bits SDRAM (4M words x 16 bits) 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
|
Elpida Memory, Inc.
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| IS42S16400B1 IS42S16400B1-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| 42S32200 IS42S32200-7T IS42S32200-7TI IS42S32200-6 |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| IS42S16400B07 IS42S16400B IS42S16400B-6TL IS42S164 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|
| TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
