PART |
Description |
Maker |
SIGC223T120R2CL |
IGBTs - HV Chips - SIGC223T120R2CL, 1200V, 150A
|
Infineon
|
SIGC223T120R2CS |
IGBTs - HV Chips - SIGC223T120R2CS, 1200V, 150A
|
Infineon
|
SIGC81T120R2CL |
IGBTs - HV Chips - SIGC81T120R2CL, 1200V, 50A
|
Infineon
|
SIGC25T60NC |
IGBTs - HV Chips - SIGC25T60NC, 600V, 30A
|
Infineon
|
SSB-COB13340SYW-B |
SINGLE COLOR DISPLAY CLUSTER, SUPER YELLOW, 133 mm 133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA 133mm x 40mm V.A. SUPER YELLOW LED BACKLIGHT, CHIPS ON BOARD, 132 CHIPS, 4.2V 660mA
|
ETC LUMEX INC. List of Unclassifed Manufacturers
|
BM-10EG88ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-20EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代 The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|