PART |
Description |
Maker |
SIGC07T60UN |
IGBTs - HV Chips - SIGC07T60UN, 600V, 6A
|
Infineon
|
SIGC104T170R2C |
IGBTs - HV Chips - SIGC104T170R2C, 1700V, 50A
|
Infineon
|
SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
SIGC121T120R2C |
IGBTs - HV Chips - SIGC121T120R2C, 1200V, 75A
|
Infineon
|
SIGC81T120R2C |
IGBTs - HV Chips - SIGC81T120R2C, 1200V , 50A
|
Infineon
|
IRGP430U |
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管(IGBTs)(超快速绝缘栅型双极型晶体管) 500V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier, Corp.
|
IXGX64N60B3D1 IXGR48N60C3D1 IXGR48N60B3D1 IXGP48N6 |
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
|
IXYS Corporation
|
LDD-E304NI |
0.30 SEVEN SEGMENT, DUAL DIGIT DISPLAY, 635nm RED CHIPS, GRAY FACE WITH WHITE SEGMENTS, COMMON ANODE, NO CHIPS IN DECIMALS.
|
List of Unclassifed Manufacturers
|
BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管(IGBTs)(绝缘栅型双极型晶体管 INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp. IRF[International Rectifier]
|
SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技 IGBTs & DuoPacks - 20A 600V TO220 IGBT IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG http:// Infineon Technologies A...
|