| PART |
Description |
Maker |
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man...
N.A.
ETC[ETC]
List of Unclassifed Manufacturers
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 0541323297 0541323397 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
| APT1101RSFLL |
Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)
|
|
| APT50M60JVR |
Volts:500V RDS(ON)0.06Ohms ID(cont):63Amps|MOSFETs 电压00V电压的RDS（ON.06Ohms身份证（续）63安培| MOSFET
|
Yageo, Corp.
|
| AT45DB1282NBSP AT45DB1282 |
128M bit, 2.7-Volt Only Dual-Interface Flash. This document is only available under NDA. Please cont
From old datasheet system
|
Atmel Corp
|
| 2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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Vishay Siliconix
Vishay Intertechnology,Inc.
|
| ICE3AR0680VJZ |
Of f -Line SMPS Cur rent Mode Cont rol ler wi th integrated 800V
|
Infineon Technologies A...
|
| VS-T90RIA100 YA200KT20 T7RYA201KT20 |
SCR PHASE CONT 1000V 90A D-55
T..RIA Series Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A
|
Vishay Semiconductors
|
